Part Image

NVD5805NT4G-VF01 - onsemi

Description: N-Channel 40 V 51A (Tc) 47W (Tc) Surface Mount DPAK

Download NVD5805NT4G-VF01 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
NVD5805NT4G-VF01 - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE F_2025
click to zoom
3D Models
NVD5805NT4G-VF01 - onsemi  - 3D model - Other - DPAK (SINGLE GAUGE) CASE 369C ISSUE F_2025
click to zoom

NVD5805NT4G-VF01 Details

  • Manufacturer Part Number:

    NVD5805NT4G-VF01

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    DPAK-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AA

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    51 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    160 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    47 W

  • Pulsed Drain Current-Max (IDM):

    85 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

NVD5805NT4G-VF01 Overview

Use the download button to access the NVD5805NT4G-VF01 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like NVD58, or try a keyword search, such as Power Field-Effect Transistors

Parts related to NVD5805NT4G-VF01

Showing 0 results

NVD5805NT4G-VF01 Alternates

Showing results

Image Part Number Model
Part Image NVD5805NT4G onsemi

Power Field-Effect Transistor, 51A I(D), 40V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD5805NT4G onsemi

Power Field-Effect Transistor, 51A I(D), 40V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NTD5805NG onsemi

Power Field-Effect Transistor, 51A I(D), 40V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET