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NVD5865NLT4G - onsemi

Description: Single N-Channel Power MOSFET 60V, 46A, 16mΩ

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NVD5865NLT4G Details

  • Manufacturer Part Number:

    NVD5865NLT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK 4 LEAD Single Gauge Surface Mount

  • Package Description:

    DPAK-3/2

  • Pin Count:

    4

  • Manufacturer Package Code:

    369AA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    49 W

  • Pulsed Drain Current-Max (IDM):

    203 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVD5865NLT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVD5865NLT4G is -40°C to 150°C.
  • To ensure proper biasing, connect the input pins (VIN and VOUT) to a stable voltage source, and ensure the output capacitor is properly sized and placed close to the device.
  • Use a multi-layer PCB with a solid ground plane, keep the input and output traces separate, and use a shielded inductor to minimize EMI. Also, place the output capacitor close to the device and use a low-ESR capacitor.
  • The output voltage ripple can be calculated using the formula: ΔVout = (Iout * ESL) / (Cout * fsw), where ESL is the equivalent series inductance of the output capacitor, Cout is the output capacitance, and fsw is the switching frequency.
  • A 10uF to 22uF ceramic capacitor with an X5R or X7R dielectric is recommended for the input capacitor, placed close to the VIN pin.

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