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NVD5867NLT4G - onsemi

Description: Single N-Channel Power MOSFET 60V, 22A, 39mΩ

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NVD5867NLT4G - onsemi PCB footprint - Other - Other - DPAK (SINGLE GUAGE) CASE 369AA ISSUE B_2024
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NVD5867NLT4G - onsemi  - 3D model - Other - DPAK (SINGLE GUAGE) CASE 369AA ISSUE B_2024
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NVD5867NLT4G Details

  • Manufacturer Part Number:

    NVD5867NLT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK 4 LEAD Single Gauge Surface Mount

  • Pin Count:

    4

  • Manufacturer Package Code:

    369AA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    47 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    85 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVD5867NLT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVD5867NLT4G is -40°C to 150°C.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground. Also, ensure that the input voltage (VIN) is within the recommended range of 4.5V to 5.5V.
  • To minimize EMI, use a multi-layer PCB with a solid ground plane, and keep the NVD5867NLT4G away from high-frequency components. Also, use short, direct traces for the input and output pins, and avoid routing signals under the device.
  • Yes, the NVD5867NLT4G is qualified for use in high-reliability applications, including automotive and aerospace. It meets the requirements of AEC-Q100 and is manufactured using a process that is compliant with IATF 16949.
  • Handle the NVD5867NLT4G with ESD-protective equipment, such as wrist straps and mats, and store it in a conductive bag or container. Avoid touching the device's pins or exposing it to static-prone environments.

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