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NVD5C668NLT4G - onsemi

Description: Low on-resistance; High current capability; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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NVD5C668NLT4G - onsemi PCB footprint - Other - Other - NVD5C668NLT4G-1
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NVD5C668NLT4G Details

  • Manufacturer Part Number:

    NVD5C668NLT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2016-12-22

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    104 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    49 A

  • Drain-source On Resistance-Max:

    0.0128 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    44 W

  • Pulsed Drain Current-Max (IDM):

    250 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVD5C668NLT4G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Monitor the device's junction temperature (TJ) and adjust the operating conditions accordingly.
  • The NVD5C668NLT4G has built-in ESD protection diodes. However, it's still recommended to follow proper ESD handling procedures during assembly and use. For latch-up prevention, ensure that the device is operated within the recommended voltage and current ranges.
  • Yes, the NVD5C668NLT4G is AEC-Q100 qualified and suitable for automotive and high-reliability applications. However, ensure that the device is used within the recommended operating conditions and follow the manufacturer's guidelines for reliability and quality.
  • Use a systematic approach to troubleshoot the issue. Check the power supply, input/output connections, and operating conditions. Verify that the device is used within the recommended specifications. Consult the datasheet and application notes for guidance.

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