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NVD5863NLT4G - onsemi

Description: Power MOSFET 60V, 82A, 7.1 mOhm, Single N-Channel, DPAK, Logic Level.

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NVD5863NLT4G Details

  • Manufacturer Part Number:

    NVD5863NLT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK 4 LEAD Single Gauge Surface Mount

  • Package Description:

    DPAK-3

  • Pin Count:

    4

  • Manufacturer Package Code:

    369AA

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.011 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    442 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVD5863NLT4G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVD5863NLT4G is -40°C to 150°C.
  • To ensure proper biasing, connect the input pins to a voltage source within the recommended operating range, and ensure the output pins are properly terminated with a load resistor.
  • For optimal thermal performance, use a multi-layer PCB with thermal vias, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet.
  • Use ESD protection devices, such as TVS diodes, on the input and output pins to protect the device from electrostatic discharge. Follow the recommended ESD protection guidelines in the datasheet.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the pins to prevent damage.

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NVD5863NLT4G Overview

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