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NVE4153NT1G - onsemi

Description: ESD Protected Gate; Low RDS(on) Improving System Efficiency; Low Threshold Voltage, 1.5V Rated; AEC−Q101 Qualified and PPAP Capable

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NVE4153NT1G - onsemi PCB footprint - Other - Other - SC−89
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NVE4153NT1G - onsemi  - 3D model - Other - SC−89
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NVE4153NT1G Details

  • Manufacturer Part Number:

    NVE4153NT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-89-3

  • Manufacturer Package Code:

    463C-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Peak Reflow Temperature (Cel):

    260

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Time@Peak Reflow Temperature-Max (s):

    30

NVE4153NT1G Frequently Asked Questions (FAQs)

  • A good PCB layout for the NVE4153NT1G involves keeping the input and output traces short and away from noise sources, using a solid ground plane, and placing decoupling capacitors close to the device. A 4-layer PCB with a dedicated power plane and a solid ground plane is recommended.
  • To ensure proper biasing, connect the VCC pin to a stable voltage source (e.g., 3.3V or 5V) and decouple it with a 10uF capacitor. The EN pin should be tied to VCC or a digital signal for enable/disable functionality. The VIN pin should be connected to a stable voltage source or a voltage regulator output.
  • The maximum current rating for the NVE4153NT1G is 1.5A. However, it's recommended to derate the current to 1A or less for reliable operation and to prevent overheating.
  • To protect the NVE4153NT1G from overvoltage and overcurrent conditions, use a voltage regulator with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider adding external protection components such as TVS diodes and fuses.
  • For thermal management, ensure good airflow around the device, and consider using a heat sink or thermal pad to dissipate heat. The device's thermal pad should be connected to a solid ground plane to improve heat dissipation.

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NVE4153NT1G Overview

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Part Image NTE4153NT1G onsemi

Small Signal Field-Effect Transistor, 0.915A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET