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NVG500A75L4DSF2 - onsemi

Description: Half Bridge Dual-Side Cooling; Ultra-Low Stray Inductance; Tj_max = 175°C continuous operation; Low VCESAT and Switching losses; AQG324 Qualified FS4 750V Narrow Mesa IGBT; Smart On Chip Current and Temperature Sensor; Wirebond-Free Structure

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NVG500A75L4DSF2 - onsemi PCB footprint - Other - Other - NVG500A75L4DSF2-8
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NVG500A75L4DSF2 - onsemi  - 3D model - Other - NVG500A75L4DSF2-8
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NVG500A75L4DSF2 Details

  • Manufacturer Part Number:

    NVG500A75L4DSF2

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    AHPM13-CGA MODULE

  • Manufacturer Package Code:

    MODHR

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.57

  • Collector Current-Max (IC):

    500 A

  • Collector-Emitter Voltage-Max:

    750 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XXMA-X13

  • Number of Elements:

    2

  • Number of Terminals:

    13

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    MICROELECTRONIC ASSEMBLY

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UNSPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    913 ns

  • Turn-on Time-Nom (ton):

    235 ns

  • VCEsat-Max:

    1.45 V

NVG500A75L4DSF2 Frequently Asked Questions (FAQs)

  • The recommended PCB layout and thermal management for optimal performance can be found in the onsemi application note AND9093/D, which provides guidelines for thermal design and layout considerations. Additionally, onsemi recommends using a 4-layer PCB with a thermal pad connected to a solid copper plane to dissipate heat efficiently.
  • To ensure the device is properly biased and configured, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consult the onsemi application note AND9093/D, which provides detailed information on biasing and configuration for optimal performance.
  • The recommended test and measurement procedures for characterizing the device's performance can be found in the onsemi application note AND9093/D. This document provides detailed information on test setup, measurement techniques, and data analysis for characterizing the device's electrical and thermal performance.
  • To prevent damage and ensure reliability, handle the device according to the recommended handling and storage procedures outlined in the onsemi datasheet and application notes. This includes avoiding excessive mechanical stress, using anti-static packaging and handling materials, and storing the device in a clean, dry environment.
  • The potential failure modes of the NVG500A75L4DSF2 include thermal overload, electrical overstress, and mechanical stress. To mitigate these failure modes, follow the recommended operating conditions, biasing schemes, and thermal management guidelines outlined in the datasheet and application notes. Additionally, implement proper PCB design, layout, and assembly practices to minimize the risk of failure.

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NVG500A75L4DSF2 Overview

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