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NVG800A75L4DSB - onsemi

Description: Half Bridge Dual-Side Cooling; Ultra-Low Stray Inductance; Tj_max = 175°C continuous operation; Low VCESAT and Switching losses; AQG324 Qualified FS4 750V Narrow Mesa IGBT; Smart On Chip Current and Temperature Sensor; Wirebond-Free Structure

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NVG800A75L4DSB Details

  • Manufacturer Part Number:

    NVG800A75L4DSB

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    AHPM15−CEC

  • Manufacturer Package Code:

    100DV

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

NVG800A75L4DSB Frequently Asked Questions (FAQs)

  • A good PCB layout should ensure minimal inductance and resistance in the power paths. Use a 2-ounce copper PCB with a solid ground plane, and place the device near the power source. For thermal management, use a heat sink with a thermal interface material, and ensure good airflow around the device.
  • Choose input capacitors with low ESR (Equivalent Series Resistance) and high ripple current rating. A minimum of 10uF capacitance is recommended, with a voltage rating of at least 1.5 times the maximum input voltage. X7R or X5R dielectric capacitors are suitable for this application.
  • The maximum allowed voltage drop across the device is 0.5V. Exceeding this voltage drop may affect the device's performance and reliability.
  • Ensure the device is biased within the recommended operating conditions. The input voltage should be within the specified range, and the enable pin should be driven with a logic signal (0V or VCC) to turn the device on or off.
  • The device has a maximum junction temperature of 150°C. Ensure good thermal conduction by using a heat sink with a thermal interface material, and keep the device away from other heat sources. Monitor the device's temperature and adjust the thermal design as needed.

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NVG800A75L4DSB Overview

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