SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max:
6.2 V
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XXMA-X15
Number of Elements:
2
Number of Terminals:
15
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-40 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
MICROELECTRONIC ASSEMBLY
Polarity/Channel Type:
N-CHANNEL
Surface Mount:
YES
Terminal Form:
UNSPECIFIED
Terminal Position:
UNSPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
Turn-off Time-Nom (toff):
855 ns
Turn-on Time-Nom (ton):
347 ns
VCEsat-Max:
1.55 V
NVG800A75L4DSC Frequently Asked Questions (FAQs)
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to ensure efficient heat dissipation.
Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer between the device and heat sink.
The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, it's recommended to keep the input voltage within the recommended operating range of 3.3V to 5V for optimal performance and reliability.
Yes, the NVG800A75L4DSC is qualified for automotive and high-reliability applications. However, it's essential to follow the recommended operating conditions, and ensure that the device is properly validated and qualified for the specific application.
Start by reviewing the datasheet and application notes, and verifying that the device is used within the recommended operating conditions. Use oscilloscopes or logic analyzers to debug the issue, and consider consulting with onsemi's technical support team or a qualified engineer.
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NVG800A75L4DSC Overview
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