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NVH4L030N120M3S - onsemi

Description: Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, TO247-4L

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NVH4L030N120M3S Details

  • Manufacturer Part Number:

    NVH4L030N120M3S

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    220 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    73 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9.4 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    313 W

  • Pulsed Drain Current-Max (IDM):

    193 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

NVH4L030N120M3S Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVH4L030N120M3S is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's performance at higher temperatures to ensure reliability and longevity.
  • Proper cooling is crucial for the NVH4L030N120M3S. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The heat sink should be designed to dissipate heat efficiently, and the device should be mounted in a way that allows for good airflow.
  • The recommended gate drive voltage for the NVH4L030N120M3S is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • To protect the NVH4L030N120M3S from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuit. The device also has built-in protection features such as overvoltage protection (OVP) and overcurrent protection (OCP), but these should be supplemented with external protection circuits for added reliability.
  • For optimal performance and reliability, follow good PCB design practices such as using a solid ground plane, minimizing trace inductance, and keeping high-frequency signals away from sensitive analog circuits. The datasheet and application notes provide more detailed guidance on PCB layout and design considerations.

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