NVH4L Model Download Search Results
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NVH4L012N065M3S
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1 | N-Channel 650 V 102A (Tc) 375W (Tc) Through Hole TO-247-4 -55°C ~ 175°C 3610 pF @ 400 V 17mOhm @ 40A, 18V | Other | NVH4L012N065M3S |
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NVH4L023N065M3S
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1 | TO-247-4L Package with Kelvin source configuration; 15V to 18V Gate Drive; Devices are Pb−Free and are RoHS Compliant; New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses; Qualified for Automotive According to AEC−Q101 | Other | NVH4L023N065M3S |
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NVH4L040N120SC1
onsemi
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1 | Max RDS(on) = 56mΩ at Vgs = 20V, Id = 35A; Qualified for Automotive According to AEC−Q101; High Speed Switching and Low Capacitance; Devices are Pb−Free and are RoHS Compliant | Other | NVH4L040N120SC1 |
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NVH4L060N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 650V rated; Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NVH4L060N065SC1 |
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NVH4L040N65S3F
onsemi
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1 | Best in Class body diode; Internal Rg; Lower RDS(ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS); Internal Zener / 650 V BVdss | Other | NVH4L040N65S3F |
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NVH4L080N120SC1
onsemi
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1 | 1200V; High Junction Temperature; High UIS, Surge Current, and Avalanche; Qualified for Automotive | Other | NVH4L080N120SC1 |
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NVH4L020N120SC1
onsemi
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1 | Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A; Qualified for Automotive According to AEC−Q101; High Speed Switching and Low Capacitance; Devices are Pb−Free and are RoHS Compliant | Other | NVH4L020N120SC1 |
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NVH4L018N075SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 750V rated; Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NVH4L018N075SC1 |
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NVH4L160N120SC1
onsemi
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1 | High Junction Temperature; 1200V; High UIS, Surge Current, and Avalanche; Qualified for Automotive | Other | NVH4L160N120SC1 |
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NVH4L070N120M3S
onsemi
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1 | New M3S technology: 65mohm RDS(ON) with low EON and EOFF losses; 15V to 18V Gate Drive; Devices are Pb−Free and are RoHS Compliant; Typical RDS(on) = 65mΩ at Vgs =18V, Id = 15A; Qualified for Automotive According to AEC−Q101 | Other | NVH4L070N120M3S |
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NVH4L050N65S3F
onsemi
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1 | Best in Class body diode; Internal Rg; Lower RDS(ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS); Internal Zener / 650 V BVdss | Other | NVH4L050N65S3F |
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NVH4L075N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; Ultra Low Gate Charge (Typ. Qg = 61 nC); High Speed Switching with Low Capacitance (Coss = 107 pF); Zero reverse recovery current of body diode; Kelvin Source configuration; Typ. RDS(on) = 57 mΩ at Vgs = 18V; 100% UIL Tested; RoHS Compliant | Other | NVH4L075N065SC1 |
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NVH4L050N170M1
onsemi
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1 | 100% Avalanche Tested; 18V to 20V Gate Drive; New 1700V M1 technology: 53mohm RDS(ON) with low EON and EOFF losses | Other | NVH4L050N170M1 |
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NVH4L016N065M3S
onsemi
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1 | N-channel 650 V 71 A (Tc) 300W (Tc) Through-hole TO-247-4 -55°C ~ 175°C | Other | NVH4L016N065M3S |
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NVH4L045N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 650V rated; Max RDS(on) = 50 mΩ at Vgs = 18V, Id = 25A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NVH4L045N065SC1 |
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NVH4L040N120M3S
onsemi
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1 | Typical RDS(on) = 40.8mΩ at Vgs =18V, Id = 25A; Qualified for Automotive According to AEC−Q101; New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses; 15V to 18V Gate Drive; Devices are Pb−Free and are RoHS Compliant | Other | NVH4L040N120M3S |
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NVH4L200N170M1
onsemi
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1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 192 mohm, 1700 V, M1, TO-247-4L | Other | NVH4L200N170M1 |
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NVH4L022N120M3S
onsemi
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1 | Qualified for Automotive According to AEC−Q101; Max RDS(on) = 30mΩ at Vgs =18V, Id = 60A; 15V to 18V Gate Drive; Devices are Pb−Free and are RoHS Compliant; New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses | Other | NVH4L022N120M3S |
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NVH4L015N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 650V rated; Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NVH4L015N065SC1 |
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NVH4L025N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; 650V rated; Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A; High Speed Switching and Low Capacitance; 100% UIL Tested; Devices are RoHS Compliant | Other | NVH4L025N065SC1 |
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NVH4L032N065M3S
onsemi
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1 | New M3S technology: 32 mohm RDS(ON) with low Eon and Eoff losses; Qualified for Automotive According to AEC−Q101; 15V to 18V Gate Drive; TO-247-4L Package with Kelvin source configuration; Devices are Pb−Free and are RoHS Compliant | NVH4L032N065M3S |
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NVH4L050N065SC1
onsemi
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1 | Power Field-Effect Transistor, 62.6A I(D), 650V, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | NVH4L050N065SC1 |
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NVH4L095N065SC1
onsemi
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1 | Qualified for Automotive According to AEC−Q101; Ultra Low Gate Charge (Typ. Qg = 50 nC); High Speed Switching with Low Capacitance (Coss = 89 pF); Zero reverse recovery current of body diode; Kelvin Source configuration; Typ. RDS(on) = 70 mΩ at Vgs = 18V; 100% UIL Tested; RoHS Compliant | NVH4L095N065SC1 |
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NVH4L110N65S3F
onsemi
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1 | Power Field-Effect Transistor, 30A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | NVH4L110N65S3F |
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NVH4L030N120M3S
onsemi
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1 | Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, TO247-4L | NVH4L030N120M3S |
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