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NVH4L050N65S3F - onsemi

Description: Best in Class body diode; Internal Rg; Lower RDS(ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS); Internal Zener / 650 V BVdss

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NVH4L050N65S3F - onsemi PCB footprint - Other - Other - NVH4L050N65S3F-2
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NVH4L050N65S3F Details

  • Manufacturer Part Number:

    NVH4L050N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2020-09-21

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    830 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    58 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    14 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    403 W

  • Pulsed Drain Current-Max (IDM):

    145 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

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