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NVH4L040N65S3F - onsemi

Description: Best in Class body diode; Internal Rg; Lower RDS(ON) / Same Packages; Lower FOM (RDS (ON) max X QG typ & RDS (ON) max X EOSS); Internal Zener / 650 V BVdss

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NVH4L040N65S3F - onsemi - PCB symbol
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PCB Footprints
NVH4L040N65S3F - onsemi PCB footprint - Other - Other - TO−247−4LD (Pb−Free)
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3D Models
NVH4L040N65S3F - onsemi - 3D model - Other - TO−247−4LD (Pb−Free)
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NVH4L040N65S3F Details

  • Manufacturer Part Number:

    NVH4L040N65S3F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Date Of Intro:

    2020-08-14

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    1009 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15.8 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    446 W

  • Pulsed Drain Current-Max (IDM):

    162.5 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

NVH4L040N65S3F Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including junction temperature (Tj) and ambient temperature (Ta). Also, consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The NVH4L040N65S3F has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended.
  • Yes, the NVH4L040N65S3F is qualified for automotive and high-reliability applications. It meets the requirements of AEC-Q101 and is manufactured using a process that ensures high reliability and low defect rates.
  • The recommended gate drive requirements for the NVH4L040N65S3F include a gate voltage (Vgs) of 10V to 15V, a gate current (Ig) of 1A to 2A, and a gate resistance (Rg) of 10 ohms to 20 ohms.

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NVH4L040N65S3F Overview

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