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NVH4L160N120SC1 - onsemi

Description: High Junction Temperature; 1200V; High UIS, Surge Current, and Avalanche; Qualified for Automotive

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NVH4L160N120SC1 - onsemi PCB footprint - Other - Other - NVH4L160N120SC1-1
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NVH4L160N120SC1 Details

  • Manufacturer Part Number:

    NVH4L160N120SC1

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-4

  • Manufacturer Package Code:

    340CJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    6 Weeks

  • Date Of Intro:

    2019-12-20

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    128 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    17.3 A

  • Drain-source On Resistance-Max:

    0.224 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4.3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    111 W

  • Pulsed Drain Current-Max (IDM):

    69 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

  • Turn-off Time-Max (toff):

    39 ns

  • Turn-on Time-Max (ton):

    40 ns

NVH4L160N120SC1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the NVH4L160N120SC1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the NVH4L160N120SC1. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, make sure to follow the recommended PCB layout and thermal design guidelines.
  • The recommended gate drive voltage for the NVH4L160N120SC1 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • To protect the NVH4L160N120SC1 from overvoltage and overcurrent, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit. The OVP circuit should be designed to clamp the voltage at a level below the device's maximum rated voltage, and the OCP circuit should be designed to limit the current to a level below the device's maximum rated current.
  • The recommended dead time for the NVH4L160N120SC1 depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is recommended. However, the optimal dead time may vary depending on the specific requirements of the application.

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