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NVJD4152PT1G - onsemi

Description: Leading Trench Technology for Low RDS(ON) Performance; Small Footprint Package (SC70−6 Equivalent); ESD Protected Gate; AEC−Q101 Qualified and PPAP Capable

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PCB Footprints
NVJD4152PT1G - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88 2.00x1.25x0.90, 0.65P CASE 419B−02 ISSUE Z
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3D Models
NVJD4152PT1G - onsemi  - 3D model - SOT23 (6-Pin) - SC−88 2.00x1.25x0.90, 0.65P CASE 419B−02 ISSUE Z
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NVJD4152PT1G Details

  • Manufacturer Part Number:

    NVJD4152PT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.9

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.88 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.35 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

NVJD4152PT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVJD4152PT1G is -55°C to 150°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10 V, and a gate current (Ig) of at least 10 mA.
  • The recommended gate resistor value for the NVJD4152PT1G is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the NVJD4152PT1G is suitable for high-frequency switching applications up to 1 MHz, but ensure proper thermal management and consider the device's switching losses.
  • To protect the NVJD4152PT1G from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection in mind.

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NVJD4152PT1G Overview

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