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NVMFS5C682NLT1G - onsemi

Description: Industry Standard Small Footprint 5x6mm Package; Low QG and Gate Capacitance; Low RDS(on); NVMFS5C682NLWF − Wettable Flank Option; AEC−Q101 Qualified and PPAP Capable; RoHS Compliant

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PCB Footprints
NVMFS5C682NLT1G - onsemi PCB footprint - Other - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NVMFS5C682NLT1G - onsemi  - 3D model - Other - DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N
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NVMFS5C682NLT1G Details

  • Manufacturer Part Number:

    NVMFS5C682NLT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    SO-8FL / DFN-5

  • Package Description:

    SO-8FL, DFN5, 6 PIN

  • Manufacturer Package Code:

    488AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    85 Weeks, 5 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    43 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.0315 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMFS5C682NLT1G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for NVMFS5C682NLT1G is 2.7V to 3.6V.
  • To ensure data integrity, it is recommended to follow the power-down and power-up sequences outlined in the datasheet, and to use a voltage supervisor or reset circuit to ensure that the device is properly initialized.
  • The NVMFS5C682NLT1G supports up to 100,000 erase cycles.
  • Page erase and program operations should be performed using the commands outlined in the datasheet, and should be followed by a verification step to ensure data integrity.
  • The recommended method for detecting and handling errors is to use the built-in Error Correction Code (ECC) and to implement a retry mechanism in the event of an error.

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NVMFS5C682NLT1G Overview

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Power Field-Effect Transistor, 25A I(D), 60V, 0.0315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image NVMFS5C682NLWFT1G onsemi

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For a full list of alternate parts for NVMFS5C682NLT1G, check out Findchips.com