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NVMJS2D5N06CLTWG - onsemi

Description: Small Footprint (5x6 mm); Low RDS (ON); Low QG and Capacitance; LFPAK8 Package, Industry Standard; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

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NVMJS2D5N06CLTWG - onsemi PCB footprint - Other - Other - LFPAK8 5x6 CASE 760AA ISSUE C
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NVMJS2D5N06CLTWG - onsemi  - 3D model - Other - LFPAK8 5x6 CASE 760AA ISSUE C
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NVMJS2D5N06CLTWG Details

  • Manufacturer Part Number:

    NVMJS2D5N06CLTWG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    LFPAK-8

  • Manufacturer Package Code:

    760AA

  • Country Of Origin:

    Mainland China, Malaysia, Philippines, Thailand, Vietnam

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    565 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    164 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    28 pF

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    113 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

NVMJS2D5N06CLTWG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NVMJS2D5N06CLTWG is -55°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source (e.g., 5V) and the source to ground. The drain should be connected to a load or a voltage source, depending on the application.
  • The recommended gate resistor value for the NVMJS2D5N06CLTWG is typically in the range of 1 kΩ to 10 kΩ, depending on the specific application and switching frequency.
  • Yes, the NVMJS2D5N06CLTWG is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).
  • To protect the device from ESD, handle the device by the body or use an ESD wrist strap, and ensure the PCB has proper ESD protection circuitry, such as TVS diodes or ESD protection arrays.

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NVMJS2D5N06CLTWG Overview

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