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NXH350N100H4Q2F2PG - onsemi

Description: SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode

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NXH350N100H4Q2F2PG - onsemi PCB footprint - Other - Other - NXH350N100H4Q2F2PG-1
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NXH350N100H4Q2F2PG - onsemi  - 3D model - Other - NXH350N100H4Q2F2PG-1
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NXH350N100H4Q2F2PG Details

  • Manufacturer Part Number:

    NXH350N100H4Q2F2PG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    Q2

  • Manufacturer Package Code:

    180BH

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-02-19

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    329 A

  • Collector-Emitter Voltage-Max:

    1000 V

  • Configuration:

    2 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X42

  • Number of Elements:

    2

  • Number of Terminals:

    42

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TRAY

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    592 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    572.5 ns

  • Turn-on Time-Nom (ton):

    114 ns

  • VCEsat-Max:

    1.8 V

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
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System Verified
This model has been reviewed by community users.
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NXH350N100H4Q2F2PG Overview

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