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NXH450N65L4Q2F2PG - onsemi

Description: Field Stop 4 650 V IGBTs for fast switching performance combined with excellent VCEsat; Solder pin version

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NXH450N65L4Q2F2PG Details

  • Manufacturer Part Number:

    NXH450N65L4Q2F2PG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    PIM36 93x47 (PRESSFIT)

  • Manufacturer Package Code:

    180CD

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-04-27

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    280 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    5.2 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X36

  • Number of Elements:

    2

  • Number of Terminals:

    36

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    633 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    978 ns

  • Turn-on Time-Nom (ton):

    192 ns

  • VCEsat-Max:

    2.2 V

NXH450N65L4Q2F2PG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the NXH450N65L4Q2F2PG is -55°C to 150°C.
  • To ensure safe operating area (SOA) for the NXH450N65L4Q2F2PG, follow the guidelines outlined in the datasheet, including limiting the drain-source voltage, drain current, and power dissipation within the recommended specifications.
  • The recommended gate drive voltage for the NXH450N65L4Q2F2PG is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To minimize power losses, ensure that the MOSFET is operated within its recommended specifications, use a suitable heat sink, and optimize the gate drive circuit to minimize switching losses.
  • Yes, the NXH450N65L4Q2F2PG is suitable for high-frequency switching applications due to its low gate charge, low output capacitance, and fast switching times.

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NXH450N65L4Q2F2PG Overview

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