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NXH80T120L3Q0S3G - onsemi

Description: High speed 1200V and 650V IGBTs with low VCESAT; Options with pre-applied thermal interface material (TIM) and without pre-applied TIM; Options with press-fit pins and solder pins

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NXH80T120L3Q0S3G Details

  • Manufacturer Part Number:

    NXH80T120L3Q0S3G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    Q0

  • Manufacturer Package Code:

    180AB

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.35

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X20

  • Number of Elements:

    4

  • Number of Terminals:

    20

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    750 ns

  • Turn-on Time-Nom (ton):

    98 ns

  • VCEsat-Max:

    2.4 V

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NXH80T120L3Q0S3G Overview

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