NXH80 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Solderable Pins; Low Inductive Layout; Field Stop Trench 7 IGBTs & Gen.7 Diodes; 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power Module; Isolated Base Plate; NTC Thermistor Other NXH800H120L7QDSG 1 Download Model
Part Image Part Image 1 IGBT Module Trench Field Stop Three Level Inverter 1200 V 67 A 158 W Chassis Mount 20-PIM/Q0PACK (55x32.5) Other NXH80T120L2Q0P2G 1 Download Model
Part Image Part Image 1 Module with low thermal impedance baseplate; Solder and press-fit options Other NXH800A100L4Q2F2P1G 1 Download Model
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 309A I(C), 1000V V(BR)CES, N-Channel NXH800A100L4Q2F2S1G 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 67A I(C), 1200V V(BR)CES, N-Channel NXH80T120L2Q0S2G 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel NXH80B120H2Q0SG 0 Build or Request
Part Image Part Image 1 Power Integrated Module (PIM), T-Type NPC 1200 V, 80 A IGBT, 600 V, 50 A IGBT Solder pins; Thermal interface material (TIM), Q0, 24-BTRAY NXH80T120L3Q0S3TG 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel NXH80B120H2Q0SNG 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel NXH80B120L2Q0SG 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 65A I(C), 1200V V(BR)CES NXH80T120L2Q0SG 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor NXH80B120L2Q0SGQ0BOOST 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor NXH80T120L2Q0S1GQ0PACK 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel NXH80B120L2Q0SNG 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel NXH80T120L3Q0P3G 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor NXH80T120L2Q0P2TG 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 57A I(C), 1200V V(BR)CES, N-Channel NXH80T120L2Q0S1G 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel NXH80B120H2Q0SGQ0BOOST 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 67A I(C), 1200V V(BR)CES, N-Channel NXH80T120L2Q0S2TG 0 Build or Request
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 65A I(C), 1200V V(BR)CES NXH80T120L2Q0PG 0 Build or Request
Part Image Part Image 1 Module with low thermal impedance baseplate; Solder and press-fit options NXH800A100L4Q2F2S2G 1 Download Model
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel NXH80B120H2Q0SNGQ0BOOST 0 Build or Request
Part Image Part Image 1 SiC MOSFET Specification: 80 mΩ 1200 V; 30 A / 1600 V Bypass Diodes; SiC Rectifier Specification: VF = 1.4 V; Solderable Pins; Thermistor NXH80B120MNQ0SNG 1 Download Model
Part Image Part Image 1 High speed 1200V and 650V IGBTs with low VCESAT; Options with pre-applied thermal interface material (TIM) and without pre-applied TIM; Options with press-fit pins and solder pins NXH80T120L3Q0S3G 1 Download Model
Part Image Part Image 1 IGBT Module, A-Type NPC 1000 V, 800 A IGBT NXH800A100L4Q2F2P2G 1 Download Model
Part Image Part Image 1 Insulated Gate Bipolar Transistor, 65A I(C), 1200V V(BR)CES, N-Channel SNXH80T120L2Q0SG 0 Build or Request
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