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P2N2907A - onsemi

Description: Transistor Silicon Plastic PNP

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P2N2907A Details

  • Manufacturer Part Number:

    P2N2907A

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92 (TO-226) 5.33mm Body Height

  • Package Description:

    CASE 29-11, TO-226AA, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.625 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • Turn-off Time-Max (toff):

    110 ns

  • Turn-on Time-Max (ton):

    50 ns

P2N2907A Frequently Asked Questions (FAQs)

  • The maximum SOA for the P2N2907A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 1.5 A and 30 V.
  • To ensure linear operation, the P2N2907A should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6 V and 0.8 V, and a collector-emitter voltage (Vce) greater than 1 V. The base current should be limited to prevent saturation.
  • The recommended storage temperature for the P2N2907A is -55°C to 150°C, as specified in the datasheet. However, it's recommended to store the devices in a cool, dry place, away from direct sunlight and moisture.
  • While the P2N2907A is primarily designed for linear amplification, it can be used in switching applications with proper design considerations. However, its switching speed is limited by its transition frequency (ft) of around 300 MHz, and it may not be suitable for high-frequency switching applications.
  • The P2N2907A has a human body model (HBM) ESD rating of 2 kV. To ensure ESD protection, handle the devices with anti-static wrist straps, mats, or bags, and avoid touching the pins or leads. Use ESD-protected workstations and follow proper handling procedures.

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P2N2907A Overview

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Part Image PN2907A Continental Device India Ltd

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Part Image PN2907A-BP Micro Commercial Components

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Part Image PN2907A Micro Commercial Components

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Part Image PN2907A-T NXP Semiconductors

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