Part Image

PH2525L,115 - Nexperia

Description: --

Download PH2525L,115 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
PH2525L,115 - Nexperia  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

PH2525L,115 Details

  • Manufacturer Part Number:

    PH2525L,115

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC

  • Package Description:

    LFPAK-4

  • Pin Count:

    4

  • Manufacturer Package Code:

    SOT669

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Date Of Intro:

    2017-02-01

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-235

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PH2525L,115 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the input and output traces short and away from each other to minimize noise and EMI.
  • Use a high-quality output capacitor with low ESR (Equivalent Series Resistance) and a minimum capacitance of 10uF. Also, ensure the input voltage is within the recommended range and the device is operated within the specified temperature range.
  • Although the datasheet specifies a maximum input voltage of 18V, it's recommended to limit the input voltage to 15V to ensure reliable operation and prevent damage to the device.
  • Use an external current limiting resistor or a fuse in series with the input voltage to prevent overcurrent conditions. Also, ensure the output is protected with a fuse or a current limiting circuit to prevent damage from short-circuit conditions.
  • The thermal derating curve is not explicitly provided in the datasheet. However, as a general guideline, the device's power dissipation should be derated by 1.5% per degree Celsius above 25°C to ensure reliable operation.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

PH2525L,115 Overview

Use the download button to access the PH2525L,115 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like PH252, or try a keyword search, such as Power Field-Effect Transistors

About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

Parts related to PH2525L,115

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

PH2525L,115 Alternates

Showing results

Image Part Number Model
Part Image PH2625L NXP Semiconductors

Power Field-Effect Transistor, 100A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Part Image PH2625L,115 Nexperia

Power Field-Effect Transistor, 100A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Part Image PH2525L Nexperia

Power Field-Effect Transistor, 100A I(D), 25V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET