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PMDPB56XNEAX - Nexperia

Description: Mosfet Array 2 N-Channel (Dual) 30V 3.1A (Ta) 485mW (Ta) Surface Mount DFN2020D-6

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PCB Footprints
PMDPB56XNEAX - Nexperia PCB footprint - Other - Other - PMDPB56XNEAX-2
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PMDPB56XNEAX - Nexperia  - 3D model - Other - PMDPB56XNEAX-2
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PMDPB56XNEAX Details

  • Manufacturer Part Number:

    PMDPB56XNEAX

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN2020D-6, 6 PIN

  • Manufacturer Package Code:

    SOT1118D

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    6.95

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.1 A

  • Drain-source On Resistance-Max:

    0.072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PMDPB56XNEAX Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by consulting Nexperia's application notes or contacting their support team.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) that is at least 10V higher than the threshold voltage (Vth). For turn-off, ensure the gate-source voltage is at least 2V lower than Vth. Additionally, use a gate driver with a sufficient current capability to quickly charge and discharge the gate capacitance.
  • For optimal thermal performance, use a PCB layout with a large copper area for heat dissipation. Ensure the MOSFET is mounted on a heat sink with a thermal interface material (TIM) and follow Nexperia's recommended thermal design guidelines.
  • The PMDPB56XNEAX has a relatively high gate capacitance, which may limit its suitability for high-frequency switching applications. However, it can still be used in switching frequencies up to several hundred kHz with proper gate drive design and layout optimization.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage conditions. For overcurrent protection, implement a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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PMDPB56XNEAX Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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