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PMV250EPEA - Nexperia

Description: NEXPERIA - PMV250EPEA - MOSFET, P-CH, -40V, SOT-23-3

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PCB Footprints
PMV250EPEA - Nexperia PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT -23
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3D Models
PMV250EPEA - Nexperia  - 3D model - SOT23 (3-Pin) - SOT -23
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PMV250EPEA Details

  • Manufacturer Part Number:

    PMV250EPEA

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-02-18

  • Manufacturer:

    Nexperia

  • YTEOL:

    6.9

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.24 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PMV250EPEA Frequently Asked Questions (FAQs)

  • Nexperia recommends a PCB layout with a large copper area connected to the tab of the PMV250EPEA to dissipate heat efficiently. A minimum of 1 oz copper thickness and a thermal via array under the device are also recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow Nexperia's recommended thermal design guidelines, including proper heat sinking, and to derate the device's power dissipation according to the ambient temperature.
  • Although the datasheet doesn't specify a maximum VGS during startup, Nexperia recommends limiting the voltage to 10 V to prevent damage to the internal ESD protection diodes.
  • Yes, the PMV250EPEA is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize parasitic inductances and ensure reliable operation.
  • To protect the PMV250EPEA from EOS and ESD, Nexperia recommends using a robust gate drive circuit, implementing TVS diodes or ESD protection devices, and following proper handling and storage procedures to prevent damage.

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PMV250EPEA Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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Small Signal Field-Effect Transistor, 1.5A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB