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PMZ550UNEYL - Nexperia

Description: MOSFET 30V N-Channel Trench MOSFET

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PMZ550UNEYL - Nexperia PCB footprint - Other - Other - SOT883_1
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PMZ550UNEYL - Nexperia  - 3D model - Other - SOT883_1
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PMZ550UNEYL Details

  • Manufacturer Part Number:

    PMZ550UNEYL

  • Brand Name:

    Nexperia

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN

  • Package Description:

    DFN1006-3, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    SOT883

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Nexperia

  • YTEOL:

    6.2

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    0.59 A

  • Drain-source On Resistance-Max:

    0.67 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PBCC-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

PMZ550UNEYL Frequently Asked Questions (FAQs)

  • The SOA is not explicitly stated in the datasheet, but it can be estimated using the MOSFET's thermal resistance, maximum junction temperature, and voltage/current ratings. Consult Nexperia's application notes for guidance.
  • Use a gate driver IC or a voltage regulator to ensure the gate-source voltage remains within the recommended range of -10 V to 10 V. Exceeding this range may damage the MOSFET.
  • Follow Nexperia's recommended PCB layout guidelines for high-power MOSFETs, including using a thermal pad, thermal vias, and a heat sink if necessary. Ensure good thermal conductivity and minimal thermal resistance.
  • Use a diode (e.g., 1N4007) in parallel with the MOSFET to prevent unwanted conduction. This is especially important in high-frequency switching applications.
  • Handle the MOSFET with ESD-protective equipment and follow standard ESD precautions (e.g., wrist straps, anti-static bags). The MOSFET has internal ESD protection, but external protection is still recommended.

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PMZ550UNEYL Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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