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PZT651T1G - onsemi

Description: PNP Complement is PZT751T1; High Current: 2.0 Amp; The SOT-223 package can be soldered using wave or reflow.; SOT-223 package ensures level mounting, resulting in improved thermalconduction, and allows visual inspection of soldered joints. The formedleads absorb thermal stress during soldering, eliminating the possibilityof damage to the die.; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free,

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PCB Footprints
PZT651T1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE R
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3D Models
PZT651T1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE R
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PZT651T1G Details

  • Manufacturer Part Number:

    PZT651T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, 3 PIN

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.8 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    75 MHz

PZT651T1G Frequently Asked Questions (FAQs)

  • The recommended storage condition for PZT651T1G is in a dry, cool place, away from direct sunlight and moisture. The storage temperature should be between -40°C to 125°C.
  • Handle the PZT651T1G by the package body, avoiding touching the leads or die. Use an anti-static wrist strap or mat to prevent electrostatic discharge (ESD) damage.
  • The maximum power dissipation for PZT651T1G is 250 mW. Exceeding this limit may cause the device to overheat and fail.
  • Yes, PZT651T1G is suitable for high-frequency applications up to 1 GHz. However, the device's performance may degrade at higher frequencies due to parasitic capacitance and inductance.
  • To ensure the reliability of PZT651T1G, follow the recommended assembly and handling procedures, and perform thorough testing and inspection during the manufacturing process.

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PZT651T1G Overview

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Part Image PZT651T1 onsemi

Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA