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QS8J11TCR - ROHM Semiconductor

Description: MOSFET 2P-CH 12V 3.5A TSMT8

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PCB Footprints
QS8J11TCR - ROHM Semiconductor PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - TSMT8_
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QS8J11TCR - ROHM Semiconductor  - 3D model - SO Transistor Flat Lead - TSMT8_
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QS8J11TCR Details

  • Manufacturer Part Number:

    QS8J11TCR

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    TSMT8, 8 PIN

  • Pin Count:

    8

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    1

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

QS8J11TCR Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the QS8J11TCR is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper soldering and mounting, follow the recommended land pattern and soldering conditions specified in the datasheet. Additionally, use a soldering iron with a temperature range of 250°C to 260°C, and apply a moderate amount of soldering flux to prevent oxidation.
  • The maximum allowable power dissipation for the QS8J11TCR is 1.5W, as specified in the datasheet. Exceeding this limit may cause the device to overheat, leading to reduced performance, reliability issues, or even permanent damage.
  • Yes, the QS8J11TCR is suitable for high-frequency applications up to 100 MHz. However, it's essential to consider the device's parasitic capacitance, inductance, and resistance when designing the circuit to ensure optimal performance and minimize signal degradation.
  • To prevent electrostatic discharge (ESD) damage, handle the QS8J11TCR with care, using an ESD wrist strap or mat, and ensure that the workspace is ESD-protected. Additionally, follow proper soldering and handling techniques to minimize the risk of ESD damage.

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QS8J11TCR Overview

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