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RD3H045SPTL1 - ROHM Semiconductor

Description: MOSFET Pch -45V -4.5A TO-252 (DPAK)

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RD3H045SPTL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RD3H045SPTL1 - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RD3H045SPTL1 Details

  • Manufacturer Part Number:

    RD3H045SPTL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-11-07

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    45 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.26 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3H045SPTL1 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area connected to the thermal pad, and to use thermal vias to dissipate heat to the bottom layer. Additionally, keeping the thermal pad away from other components and traces can help reduce thermal resistance.
  • To ensure the device is properly biased, make sure to follow the recommended operating conditions and biasing schemes outlined in the datasheet. This includes setting the input voltage, output voltage, and current limits within the specified ranges. Additionally, ensure that the device is properly decoupled and that the power supply is stable.
  • When handling the device, take precautions to prevent electrostatic discharge (ESD) damage by using an ESD wrist strap or mat, and handling the device by the body rather than the pins. Also, avoid touching the pins or exposing the device to moisture, extreme temperatures, or physical stress.
  • To troubleshoot issues with the device, start by checking the power supply and input voltage to ensure they are within the specified ranges. Check for any signs of physical damage or overheating, and verify that the device is properly biased and decoupled. If the issue persists, consult the datasheet and application notes for troubleshooting guides or contact ROHM Semiconductor support.
  • For high-frequency applications, consider using a low-ESR capacitor for decoupling, and ensure that the PCB layout is optimized for high-frequency signal integrity. Additionally, consider using a shielded enclosure or metal can to reduce electromagnetic interference (EMI).

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RD3H045SPTL1 Overview

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Part Image RD3H045SPFRATL ROHM Semiconductor

Power Field-Effect Transistor, 4.5A I(D), 45V, 0.26ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252