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RD3L080SNTL1 - ROHM Semiconductor

Description: MOSFET Nch 60V 8A TO-252 (DPAK)

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RD3L080SNTL1 - ROHM Semiconductor PCB footprint - Other - Other - TO-252 (DPAK)_Master
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RD3L080SNTL1 - ROHM Semiconductor  - 3D model - Other - TO-252 (DPAK)_Master
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RD3L080SNTL1 Details

  • Manufacturer Part Number:

    RD3L080SNTL1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Date Of Intro:

    2017-07-24

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.109 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RD3L080SNTL1 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad of the IC to the ground plane. This helps to dissipate heat efficiently.
  • To ensure the stability of the output voltage, it's essential to follow the recommended capacitor selection and placement guidelines in the datasheet. Additionally, using a low-ESR capacitor and placing it close to the IC can help to reduce noise and improve stability.
  • Although the datasheet specifies a maximum input voltage of 6.5V, it's recommended to limit the input voltage to 5.5V to ensure reliable operation and to prevent damage to the IC.
  • While the RD3L080SNTL1 is rated for operation up to 125°C, it's essential to consider the derating curves in the datasheet to ensure that the IC can handle the expected temperature range in your specific application.
  • The output voltage accuracy can be calculated by considering the tolerance of the internal voltage reference, the resistor tolerance, and the output voltage setting resistors. A detailed calculation is provided in the datasheet.

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RD3L080SNTL1 Overview

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Part Image RD3L080SNFRATL ROHM Semiconductor

Power Field-Effect Transistor, 8A I(D), 60V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252