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RF1005TF6S - ROHM Semiconductor

Description: Rectifiers DIODE SWITCH 600V 10A 2PIN

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RF1005TF6S - ROHM Semiconductor - PCB symbol
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PCB Footprints
RF1005TF6S - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220NFM
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3D Models
RF1005TF6S - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO220NFM
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RF1005TF6S Details

  • Manufacturer Part Number:

    RF1005TF6S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-220NFM, 3/2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Application:

    SUPER FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-220AC

  • JESD-30 Code:

    R-PSFM-T2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    10 µA

  • Reverse Recovery Time-Max:

    0.04 µs

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

RF1005TF6S Frequently Asked Questions (FAQs)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and a microstrip line layout with a 50Ω impedance. The device should be placed near the edge of the board to minimize parasitic inductance.
  • The RF1005TF6S requires a bias voltage of 2.5V to 5.5V. Ensure the bias voltage is stable and noise-free, and use a low-ESR capacitor (e.g., 100nF) to decouple the bias pin.
  • The RF1005TF6S can handle up to 33dBm (2W) of continuous wave (CW) power. However, the actual power handling capability may vary depending on the application, PCB layout, and environmental conditions.
  • Ensure good thermal conductivity by using a thermal pad or heat sink, and keep the device away from other heat sources. The maximum junction temperature is 150°C, and the device should be operated within the recommended temperature range of -40°C to 85°C.
  • ROHM recommends using a TVS (Transient Voltage Suppressor) diode or a ESD protection device with a capacitance of 100pF or less to protect the RF1005TF6S from electrostatic discharge.

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RF1005TF6S Overview

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RF1005TF6S Alternates

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Part Image RF1005TF6SC9 ROHM Semiconductor

Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC