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RFD12N06RLESM9A - onsemi

Description: Simulation Models  - Temperature Compensated PSPICE® and SABER© Electrical Models  - Spice and SABER© Thermal Impedance Models; UIS Rating Curve; Peak Current vs Pulse Width Curve; Switching Time vs RGS Curves; Ultra Low On-Resistance  - rDS(ON) = 0.063, VGS = 10V  - rDS(ON) = 0.071, VGS = 5V

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RFD12N06RLESM9A - onsemi PCB footprint - Other - Other - RFD12N06RLESM9A-4
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RFD12N06RLESM9A Details

  • Manufacturer Part Number:

    RFD12N06RLESM9A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    49 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFD12N06RLESM9A Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the RFD12N06RLESM9A is -55°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • The recommended gate drive voltage for the RFD12N06RLESM9A is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the RFD12N06RLESM9A from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
  • The maximum allowed current for the RFD12N06RLESM9A is 12A, with a maximum pulsed current of 24A.

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RFD12N06RLESM9A Overview

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