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RFD16N05LSM9A - onsemi

Description: Can be Driven Directly from CMOS, NMOS, TTL Circuits; Majority Carrier Devicee; UIS SOA Rating Curve (Single Pulse); Related Literature  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”; Nanosecond Switching Speeds; 16A, 50V; High Input Impedance; SOA is Power Dissipation Limited; Linear Transfer Characteristics; Design Optimized for 5V Gate Drives; rDS(ON)= 0.047Ω

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PCB Footprints
RFD16N05LSM9A - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_2019
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3D Models
RFD16N05LSM9A - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_2019
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RFD16N05LSM9A Details

  • Manufacturer Part Number:

    RFD16N05LSM9A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA VARIANT, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Additional Feature:

    MEGAFET

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFD16N05LSM9A Frequently Asked Questions (FAQs)

  • The maximum junction temperature (Tj) for the RFD16N05LSM9A is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink's airflow path.
  • The recommended gate resistor value for the RFD16N05LSM9A is between 10Ω to 100Ω. A higher value can reduce EMI, but may increase switching losses.
  • Yes, the RFD16N05LSM9A is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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RFD16N05LSM9A Overview

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Part Image RFD16N05LSM9A Rochester Electronics LLC

16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN

Part Image RFD16N05LSM Intersil Corporation

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Part Image SMD25N05-45L Temic Semiconductors

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Part Image RFD16N05L Intersil Corporation

Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image SMU25N05-45L Temic Semiconductors

Power Field-Effect Transistor, 5A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

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