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RFD16N06LESM9A - onsemi

Description: 16A, 60V; Peak Current vs Pulse Width Curve; UIS Rating Curve; Can be Driven Directly from CMOS, NMOS,and TTL Circuits; rDS(ON)= 0.047Ω; Temperature Compensating PSPICE® Model; Related Literature  - TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”

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RFD16N06LESM9A - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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RFD16N06LESM9A - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_FFW-4
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RFD16N06LESM9A Details

  • Manufacturer Part Number:

    RFD16N06LESM9A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.047 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    90 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFD16N06LESM9A Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the RFD16N06LESM9A is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4V to 10V, and the drain-source voltage (Vds) should be within the recommended operating range.
  • A multi-layer PCB with a solid ground plane and thermal vias is recommended. Ensure good thermal conductivity by using a thermal pad and a heat sink if necessary.
  • Handle the device by the body or use an anti-static wrist strap. Use ESD-protected workstations and follow proper ESD handling procedures.
  • The maximum allowable power dissipation for the RFD16N06LESM9A is 120W at a case temperature of 25°C.

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RFD16N06LESM9A Overview

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Part Image RFD16N06LESM Rochester Electronics LLC

16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Image RFD16N06LESM9A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image RFD16N06LESM9A Harris Semiconductor

Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image RFD16N06LESM Intersil Corporation

Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image RFD16N06LESM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 16A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for RFD16N06LESM9A, check out Findchips.com