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RFD3055LE - onsemi

Description: UIS Rating Curve; Related Literature  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”; Temperature Compensating PSPICE® Model; Peak Current vs Pulse Width Curve; 11A, 60V; rDS(ON)= 0.107Ω

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Symbol
RFD3055LE - onsemi - PCB symbol
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PCB Footprints
RFD3055LE - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - DPAK3 (IPAK)-
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3D Models
RFD3055LE - onsemi - 3D model - Transistor Outline, Vertical - DPAK3 (IPAK)-
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RFD3055LE Details

  • Manufacturer Part Number:

    RFD3055LE

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.107 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFD3055LE Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm microstrip lines. Avoid vias and thermal pads under the device.
  • The RFD3055LE requires a 3.3V power supply and a 1.8V bias voltage. Ensure the bias voltage is stable and noise-free. Use a low-dropout regulator (LDO) and decoupling capacitors to minimize noise and ripple.
  • The RFD3055LE can handle up to 2W of continuous power. However, it's recommended to derate the power handling to 1.5W for reliable operation and to prevent overheating.
  • Use a combination of series and shunt inductors to match the input and output impedance of the device to the desired frequency band. Use a network analyzer to optimize the matching network for maximum gain and efficiency.
  • The recommended operating temperature range for the RFD3055LE is -40°C to 85°C. However, the device can operate up to 125°C with reduced performance and reliability.

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RFD3055LE Overview

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Part Image RFD3055LE Fairchild Semiconductor Corporation

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Part Image RFD3055LE Intersil Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA