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RFD3055LESM9A - onsemi

Description: Peak Current vs Pulse Width Curve; Temperature Compensating PSPICE® Model; Related Literature  - TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”; UIS Rating Curve; 11A, 60V; rDS(ON)= 0.107Ω

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RFD3055LESM9A - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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RFD3055LESM9A - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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RFD3055LESM9A Details

  • Manufacturer Part Number:

    RFD3055LESM9A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252 VARIANT, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.107 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFD3055LESM9A Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the RF traces as short as possible and use 50-ohm impedance matching to minimize signal reflections.
  • Ensure good thermal conductivity by using a heat sink or thermal pad, and provide adequate airflow around the device. Avoid blocking the thermal pads on the package.
  • The recommended input power level is between -20 dBm and 10 dBm. Exceeding this range may cause compression or damage to the device.
  • Use a high-quality, low-noise voltage regulator to power the device. Ensure the input and output impedances are matched to 50 ohms, and use a low-loss transmission line to connect the device to the antenna.
  • The maximum allowable voltage is 5.5V. Exceeding this voltage may cause permanent damage to the device.

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RFD3055LESM9A Overview

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Part Image RFD3055LESM9A Rochester Electronics LLC

11A, 60V, 0.107ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252 VARIANT, 3 PIN

Part Image RFD3055LESM Rochester Electronics LLC

Power Field-Effect Transistor

Part Image RFD3055LESM9A Harris Semiconductor

Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image RFD3055LESM Harris Semiconductor

Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image RFD3055LESM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for RFD3055LESM9A, check out Findchips.com