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RFP12N10L - onsemi

Description: Compatible with Automotive Drive Requirements; SOA is Power Dissipation Limited; Can be Driven Directly from CMOS, NMOS, TTL Circuits; Majority Carrier Device; Design Optimized for 5V Gate Drive; 12A, 100V; Related Literature  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”; Nanosecond Switching Speeds; rDS(ON)= 0.200Ω; High Input Impedance; Linear Transfer Characteristics

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RFP12N10L - onsemi - PCB symbol
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PCB Footprints
RFP12N10L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE _2
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RFP12N10L - onsemi - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE _2
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RFP12N10L Details

  • Manufacturer Part Number:

    RFP12N10L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.05

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFP12N10L Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the RFP12N10L is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels specified in the datasheet. Additionally, ensure that the gate-source voltage (Vgs) is within the recommended range of -2V to 2V.
  • For optimal thermal performance, use a PCB with a thermal pad and ensure good thermal conductivity between the device and the heat sink. Keep the thermal pad as small as possible and use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K.
  • Yes, the RFP12N10L can be used in switching applications. However, ensure that the switching frequency is within the recommended range of 100 kHz to 1 MHz, and follow the recommended gate drive circuit and voltage levels.
  • Handle the RFP12N10L with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protective wrist strap or mat, and ensure that the device is stored in an ESD-protective package.

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RFP12N10L Overview

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