Please enter a minimum 3 letters or numbers
Technical Content
Part Image

RFP50N06 - onsemi

Description: rDS(ON)= 0.022Ω; Peak Current vs Pulse Width Curve; 50A, 60V; Temperature Compensating PSPICE® Model; 175°C Operating Temperature; UIS Rating Curve

Download RFP50N06 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
RFP50N06 - onsemi - PCB symbol
click to zoom
PCB Footprints
RFP50N06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-3
click to zoom
3D Models
RFP50N06 - onsemi - 3D model - Transistor Outline, Vertical - TO-220-3
click to zoom

RFP50N06 Details

  • Manufacturer Part Number:

    RFP50N06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.15

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    131 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RFP50N06 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the RFP50N06 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate drive voltage for the RFP50N06 is between 10V and 15V. However, the gate drive voltage should be adjusted based on the specific application and switching frequency.
  • Yes, the RFP50N06 is suitable for high-frequency switching applications up to 100 kHz. However, the device's performance and reliability may degrade at frequencies above 50 kHz. It's essential to evaluate the device's performance in the specific application.
  • To protect the RFP50N06 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

RFP50N06 Overview

Use the download button to access the RFP50N06 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like RFP50, or try a keyword search, such as Power Field-Effect Transistors

Suggested Parts

If you searched for RFP50N06, you might also be interested in these parts:
Part Number
2200LL-470-H-RC
2300HT-151-H-RC
PWR220T-35-R100F
2312-H-RC
IRF4905PBF
2305-V-RC
MOC3011M
PA4342.153NLT
BM08B-ZESS-TBT (LF)(SN)

Parts related to RFP50N06

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

RFP50N06 Alternates

Showing results

Image Part Number Model
Part Image RFP50N06 Rochester Electronics LLC

50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Part Image RFP50N06_NL Rochester Electronics LLC

50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Part Image RFP50N06 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image RFP50N06 Harris Semiconductor

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image RFP50N06_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
For a full list of alternate parts for RFP50N06, check out Findchips.com