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RG2012N-101-W-T1 - Susumu

Description: Thin Film Resistors - SMD 1/8W 100 Ohms 0.05% 0805 10ppm

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Symbol
RG2012N-101-W-T1 - Susumu - PCB symbol
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PCB Footprints
RG2012N-101-W-T1 - Susumu PCB footprint - Resistor Chip - Resistor Chip - RG2012
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3D Models
RG2012N-101-W-T1 - Susumu - 3D model - Resistor Chip - RG2012
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RG2012N-101-W-T1 Details

  • Manufacturer Part Number:

    RG2012N-101-W-T1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    CHIP

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • HTS Code:

    8533.40.80.70

  • Manufacturer:

    Susumu Co Ltd

  • YTEOL:

    0

  • JESD-609 Code:

    e3

  • Mounting Feature:

    SURFACE MOUNT

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    155 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Shape:

    RECTANGULAR PACKAGE

  • Packing Method:

    TR

  • Rated Temperature:

    155 °C

  • Resistor Type:

    PTC RESETTABLE FUSE

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Placement:

    DEND

  • Terminal Shape:

    WRAPAROUND

  • Thermistor Application:

    TEMPERATURE SENSING

  • Tolerance:

    0.05%

  • Working Voltage:

    100 V

RG2012N-101-W-T1 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the RG2012N-101-W-T1 is a rectangular pad with a size of 1.2mm x 0.5mm, with a non-solder mask defined (NSMD) pad shape.
  • Yes, the RG2012N-101-W-T1 is compatible with lead-free soldering, with a recommended reflow temperature of 260°C.
  • The RG2012N-101-W-T1 has a moisture sensitivity level (MSL) of 1, which means it can withstand a maximum of 30 days in a standard ambient environment before soldering.
  • Yes, the RG2012N-101-W-T1 is suitable for high-frequency applications up to 1 GHz, with a self-resonant frequency of approximately 2.5 GHz.
  • The thermal resistance of the RG2012N-101-W-T1 is approximately 350°C/W, which means it can dissipate heat efficiently in high-power applications.

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RG2012N-101-W-T1 Overview

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