Part Image

RGS30TSX2HRC11 - ROHM Semiconductor

Description: IGBTs 10us Short-Circuit Tolerance, 1200V 15A, Automotive Field Stop Trench IGBT

Download RGS30TSX2HRC11 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
RGS30TSX2HRC11 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO 247 N-
click to zoom
3D Models
RGS30TSX2HRC11 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO 247 N-
click to zoom

RGS30TSX2HRC11 Details

  • Manufacturer Part Number:

    RGS30TSX2HRC11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247N, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-06-25

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    30 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    267 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    189 ns

  • Turn-on Time-Nom (ton):

    39 ns

  • VCEsat-Max:

    2.1 V

RGS30TSX2HRC11 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2.5mm x 2.5mm, with multiple vias to the bottom layer to ensure efficient heat dissipation. A thermal relief pattern is also recommended to reduce thermal resistance.
  • To ensure reliable operation, ROHM recommends derating the power dissipation according to the temperature derating curve provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature.
  • The maximum allowable voltage for the gate-source (VGS) and gate-drain (VGD) pins is ±20V. Exceeding this voltage may damage the device.
  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to prevent damage from electrostatic discharge. Handling the device with an anti-static wrist strap or mat is also recommended.
  • ROHM recommends a gate resistance (RG) of 10Ω to 20Ω for optimal switching performance. A lower gate resistance can improve switching speed, but may increase power consumption.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

RGS30TSX2HRC11 Overview

Use the download button to access the RGS30TSX2HRC11 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like RGS30, or try a keyword search, such as IGBTs

Parts related to RGS30TSX2HRC11

Showing 0 results