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RGS80TS65DHRC11 - ROHM Semiconductor

Description: IGBT Transistors IGBT

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PCB Footprints
RGS80TS65DHRC11 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247N
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3D Models
RGS80TS65DHRC11 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247N
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RGS80TS65DHRC11 Details

  • Manufacturer Part Number:

    RGS80TS65DHRC11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247N, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    22 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    73 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    30 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    272 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    291 ns

  • Turn-on Time-Nom (ton):

    62 ns

  • VCEsat-Max:

    2.1 V

RGS80TS65DHRC11 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the IC, and a 2-layer or 4-layer PCB with a thermal relief pattern is suggested to improve heat dissipation. A minimum of 1 oz copper thickness is recommended.
  • The device requires a stable input voltage (VIN) and a proper bias voltage (VCC) to ensure optimal performance. A decoupling capacitor (e.g., 10uF) should be placed close to the VIN pin, and a bias resistor (e.g., 1kΩ) should be used to set the VCC voltage.
  • A ceramic capacitor with a value of 10uF to 22uF is recommended for the input capacitor (CIN). A low-ESR capacitor (e.g., X5R or X7R dielectric) is preferred to minimize power losses.
  • An overvoltage protection (OVP) circuit can be implemented using a zener diode and a resistor. An undervoltage lockout (UVLO) circuit can be implemented using a voltage detector IC or a comparator with a reference voltage.
  • The recommended operating frequency range for the RGS80TS65DHRC11 is 100 kHz to 500 kHz. Operating the device outside this range may affect its performance and efficiency.

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RGS80TS65DHRC11 Overview

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