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RGS80TS65HRC11 - ROHM Semiconductor

Description: IGBT Transistors 650V 40A Field Stop Trench IGBT. RGS80TS65HR is a highly reliable IGBT for automotive inverter, heater.

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RGS80TS65HRC11 - ROHM Semiconductor  - 3D model
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RGS80TS65HRC11 Details

  • Manufacturer Part Number:

    RGS80TS65HRC11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247N, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-09-09

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    7

  • Collector Current-Max (IC):

    73 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    30 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    272 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    291 ns

  • Turn-on Time-Nom (ton):

    62 ns

  • VCEsat-Max:

    2.1 V

RGS80TS65HRC11 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2.5mm x 2.5mm, with multiple vias to the ground plane to ensure efficient heat dissipation. A minimum of 1oz copper thickness is also recommended.
  • ROHM recommends derating the power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensure proper thermal design, and consider using a heat sink or thermal interface material if necessary.
  • The maximum allowable voltage for the gate-source (Vgs) is ±20V, and for the gate-drain (Vgd) it is ±30V. Exceeding these limits may damage the device.
  • Yes, the RGS80TS65HRC11 is suitable for high-frequency switching applications up to 1MHz. However, ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • The internal diode's reverse recovery characteristics can be managed by using a snubber circuit or a dedicated diode with a fast reverse recovery time. Consult the datasheet and application notes for more information.

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