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RGS80TSX2DGC11 - ROHM Semiconductor

Description: IGBT Transistors 10us Short-Circuit Tolerance, 1200V 40A, Built-In FRD, Field Stop Trench IGBT

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RGS80TSX2DGC11 - ROHM Semiconductor - PCB symbol
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PCB Footprints
RGS80TSX2DGC11 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247N_2021
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RGS80TSX2DGC11 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-247N_2021
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RGS80TSX2DGC11 Details

  • Manufacturer Part Number:

    RGS80TSX2DGC11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247N, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-09-15

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    30 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    555 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-on Time-Nom (ton):

    89 ns

  • VCEsat-Max:

    2.1 V

RGS80TSX2DGC11 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad size of at least 2mm x 2mm, with a minimum of 10 thermal vias (0.3mm diameter) connecting the pad to the bottom layer. Additionally, a solid copper pour on the top and bottom layers can help to dissipate heat.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines. ROHM also recommends using a heat sink with a thermal resistance of 10°C/W or less, and ensuring that the device is operated within the specified junction temperature range (Tj) of -40°C to 150°C.
  • Although the datasheet specifies a maximum Vgs of ±20V, it's recommended to limit the voltage to ±15V to ensure reliable operation and prevent damage to the device.
  • To prevent latch-up and overvoltage damage, ensure that the device is operated within the specified voltage ranges, and use proper ESD protection and overvoltage protection circuits. Additionally, avoid applying voltage to the device when it's in a powered-off state.
  • ROHM recommends using a gate driver with a high current capability (e.g., 1A or higher) and a low output impedance to ensure fast switching times and reliable operation. A gate resistor (Rg) of 10Ω to 22Ω can also be used to slow down the switching speed and reduce EMI.

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RGS80TSX2DGC11 Overview

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