Please enter a minimum 3 letters or numbers
Technical Content
Part Image

RGT50TS65DGC11 - ROHM Semiconductor

Description: ROHM - RGT50TS65DGC11 - IGBT, SINGLE, 650V, 48A, TO-247N-3

Download RGT50TS65DGC11 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
RGT50TS65DGC11 - ROHM Semiconductor - PCB symbol
click to zoom
PCB Footprints
RGT50TS65DGC11 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247N_2021
click to zoom
3D Models
RGT50TS65DGC11 - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-247N_2021
click to zoom

RGT50TS65DGC11 Details

  • Manufacturer Part Number:

    RGT50TS65DGC11

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247N, 3 PIN

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-03-13

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    48 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    210 ns

  • Turn-on Time-Nom (ton):

    65 ns

RGT50TS65DGC11 Frequently Asked Questions (FAQs)

  • The thermal resistance (Rth) of the RGT50TS65DGC11 is typically around 1.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient) when mounted on a standard PCB.
  • Yes, the RGT50TS65DGC11 is suitable for high-frequency switching applications due to its low gate charge (Qg) of 65nC and low output capacitance (Coss) of 220pF.
  • To ensure proper biasing, follow the recommended gate-source voltage (Vgs) range of 2V to 10V, and maintain a stable gate drive voltage to prevent oscillations and ensure reliable switching.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the gate driver. Also, use a solid ground plane and a low-inductance decoupling capacitor.
  • The RGT50TS65DGC11 has a maximum operating temperature (Tj) of 150°C, making it suitable for high-temperature applications. However, ensure proper thermal management and derate the device's power handling accordingly.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

RGT50TS65DGC11 Overview

Use the download button to access the RGT50TS65DGC11 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like RGT50, or try a keyword search, such as IGBTs

Parts related to RGT50TS65DGC11

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑