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RGT8TM65DGC9 - ROHM Semiconductor

Description: IGBT Transistors RGT8TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.

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RGT8TM65DGC9 - ROHM Semiconductor  - 3D model
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RGT8TM65DGC9 Details

  • Manufacturer Part Number:

    RGT8TM65DGC9

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2018-11-20

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    158 ns

  • Turn-on Time-Nom (ton):

    54 ns

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RGT8TM65DGC9 Overview

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