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RGW60TS65GC13 - ROHM Semiconductor

Description: IGBT Trench Field Stop 650 V 60 A 178 W Through Hole TO-247GE

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PCB Footprints
RGW60TS65GC13 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247GE
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3D Models
RGW60TS65GC13 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247GE
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RGW60TS65GC13 Details

  • Manufacturer Part Number:

    RGW60TS65GC13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-247GE, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    0

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    30 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    178 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    149 ns

  • Turn-on Time-Nom (ton):

    50 ns

  • VCEsat-Max:

    1.9 V

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RGW60TS65GC13 Overview

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