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RN1104MFV,L3F - Toshiba

Description: Bipolar Transistors - Pre-Biased 150mW TRANSISTOR

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PCB Footprints
RN1104MFV,L3F - Toshiba PCB footprint - Other - Other - 1-1Q1S(H=0.55mm)
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3D Models
RN1104MFV,L3F - Toshiba  - 3D model - Other - 1-1Q1S(H=0.55mm)
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RN1104MFV,L3F Details

  • Manufacturer Part Number:

    RN1104MFV,L3F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RN1104MFV,L3F Frequently Asked Questions (FAQs)

  • The recommended land pattern for the RN1104MFV,L3F is a rectangular pad with a size of 1.5mm x 2.5mm, with a 0.5mm spacing between pads.
  • To handle thermal considerations, ensure good thermal conductivity between the device and the PCB, use thermal vias, and consider using a thermal pad or heat sink if necessary.
  • The maximum operating temperature range for the RN1104MFV,L3F is -40°C to 125°C, with a storage temperature range of -40°C to 150°C.
  • To ensure proper soldering, use a soldering iron with a temperature of 350°C to 370°C, and apply a soldering flux to the pads. Avoid applying excessive force or heat, and ensure the solder joints are clean and free of oxidation.
  • The recommended PCB material for the RN1104MFV,L3F is a high-temperature, low-warpage material such as FR4 or equivalent, with a thickness of 0.8mm to 1.6mm.

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RN1104MFV,L3F Overview

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