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RN1108MFV,L3F - Toshiba

Description: TRANSISTOR NPN BRT, Q1BSR=22kOhm, Q1BER=47kOhm, VCEO=50V, IC=0.1A, inSOT-723 (VESM) package

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PCB Footprints
RN1108MFV,L3F - Toshiba PCB footprint - Other - Other - SOT-723_5
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3D Models
RN1108MFV,L3F - Toshiba  - 3D model - Other - SOT-723_5
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RN1108MFV,L3F Details

  • Manufacturer Part Number:

    RN1108MFV,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

RN1108MFV,L3F Frequently Asked Questions (FAQs)

  • Toshiba provides a recommended PCB layout in their application note, which includes guidelines for component placement, trace routing, and thermal management to ensure optimal performance and minimize noise.
  • The device's operating temperature range is -40°C to 125°C. Ensure proper thermal management by providing adequate heat sinking, using thermal interface materials, and avoiding hot spots on the PCB.
  • Toshiba recommends using a 10uF to 22uF ceramic capacitor with an X5R or X7R dielectric as the input capacitor, placed as close to the VIN pin as possible to minimize noise and ensure stability.
  • The RN1108MFV,L3F is designed for low-power applications. While it can handle up to 1A of output current, it's not suitable for high-current applications. Consider using a more suitable regulator or a different design approach for high-current requirements.
  • The output voltage can be adjusted by using an external resistor divider network between the VOUT pin and the ADJ pin. Consult the datasheet for the specific resistor values and calculation formula.

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