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RN1503(TE85L,F) - Toshiba

Description: Toshiba, RN1503(TE85L,F) NPN Digital Transistor, 100 mA 50 V 22 kΩ, Ratio Of 1, Com. Emitter, 5-Pin SSOP

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RN1503(TE85L,F) - Toshiba PCB footprint - SOT23 (5-Pin) - SOT23 (5-Pin) - 2-3L1A_2022
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RN1503(TE85L,F) Details

  • Manufacturer Part Number:

    RN1503(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Collector Current-Max (IC):

    0.1 A

  • DC Current Gain-Min (hFE):

    70

  • Number of Elements:

    2

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.3 W

  • Surface Mount:

    YES

  • Transistor Element Material:

    SILICON

RN1503(TE85L,F) Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The RN1503 requires a stable input voltage (VIN) and a proper bias voltage (VCC) to operate correctly. Ensure VIN is within the recommended range (4.5V to 18V) and VCC is set to 5V ±10% for optimal performance.
  • The maximum allowed power dissipation for the RN1503 is 1.5W. Exceeding this limit may cause the device to overheat, leading to reduced performance or even failure.
  • The RN1503 is rated for operation up to 85°C (TE85L) or 150°C (TE150L). However, derating the power dissipation is necessary for high-temperature operation to prevent overheating.
  • Handle the device with anti-static precautions, such as using an ESD wrist strap or mat. Ensure the PCB design includes ESD protection components, like TVS diodes or resistors, to prevent damage from static electricity.

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RN1503(TE85L,F) Overview

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