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RN1506(TE85L,F) - Toshiba

Description: Digital Transistors Gen Trans NPN x 2 SMV, 50V, 100A

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PCB Footprints
RN1506(TE85L,F) - Toshiba PCB footprint - Other - Other - SSOP5-P-0.95_2025-1.1
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3D Models
RN1506(TE85L,F) - Toshiba  - 3D model - Other - SSOP5-P-0.95_2025-1.1
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RN1506(TE85L,F) Details

  • Manufacturer Part Number:

    RN1506(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Collector Current-Max (IC):

    0.1 A

  • DC Current Gain-Min (hFE):

    80

  • Number of Elements:

    2

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.3 W

  • Surface Mount:

    YES

  • Transistor Element Material:

    SILICON

RN1506(TE85L,F) Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure SOA, monitor the device's voltage, current, and temperature. Use a thermal management system to keep the junction temperature below 150°C. Also, follow the recommended PCB layout and thermal design guidelines.
  • The maximum allowed voltage for the RN1506(TE85L,F) is 80V. Exceeding this voltage may cause damage to the device.
  • While the RN1506(TE85L,F) is suitable for high-frequency applications, its performance may degrade above 100 kHz. For frequencies above 100 kHz, consider using a device with a higher switching frequency rating.
  • Follow a controlled power sequencing and startup procedure to prevent damage to the device. Ensure that the input voltage is applied before the enable signal, and that the output voltage is stable before applying the load.

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RN1506(TE85L,F) Overview

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